Solution derived p-ZnO/n-Si nanowire heterojunctions for photodetection

Solution-Grown Nanowire Devices for Sensitive and Fast Photodetection.

Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly onto interdigitating platinum electrodes serve as catalysts in the following solution-liquid-solid synthesis of quantum nanowires directly on immersed substra...

Fabrication of metal-semiconductor nanowire heterojunctions.

Large scale fabrication of well-aligned CdS/p-Si shell/core nanowire arrays for photodetectors using solution methods.

We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire hetero...

Electronic properties of Si/Si12x2yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si12x2yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si12x2yGexCy heterojunctions indicate that incorporation of C into Si12x2yGexCy lowers both the valenceand conduction-band edges compared to those in Si12xGex by an ave...

Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD

In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500◦C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spe...